V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER BY ONE-STEP EPITAXY

被引：18

作者：

ISHIKAWA, H

IMAI, H

UMEBU, I

HORI, K

TAKUSAGAWA, M

机构：

来源：

关键词：

D O I：

10.1063/1.331064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2851 / 2853

页数：3

共 14 条

[1] LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M
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STEVENTON, AG
[J]. ELECTRONICS LETTERS, 1981, 17 (18) : 651 - 653
[2] Hirao M., 1980, J OPT COMMUN, V1, P10, DOI 10.1515/JOC.1980.1.1.10
[3] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS
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SHEN, CC
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 429 - 431
[4] INGAASP-INP SEPARATED MULTICLAD LAYER STRIPE GEOMETRY LASERS EMITTING AT 1.5 UM
IMAI, H
ISHIKAWA, H
TANAHASHI, T
TAKUSAGAWA, M
[J]. ELECTRONICS LETTERS, 1981, 17 (01) : 17 - 19
[5] V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER
ISHIKAWA, H
IMAI, H
TANAHASHI, T
NISHITANI, Y
TAKUSAGAWA, M
TAKAHEI, K
[J]. ELECTRONICS LETTERS, 1981, 17 (13) : 465 - 467
[6] ISHIKAWA H, 1981, C SOLID STATE DEVICE
[7] ISHIKAWA H, 1980, 7TH IEEE SEM LAS C B, P31
[8] KISHINO K, 1979, ELECTRON LETT, V15, P134, DOI 10.1049/el:19790098
[9] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT
MUROTANI, T
OOMURA, E
HIGUCHI, H
NAMIZAKI, H
SUSAKI, W
[J]. ELECTRONICS LETTERS, 1980, 16 (14) : 566 - 568
[10] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
NAGAI, H
NOGUCHI, Y
TAKAHEI, K
TOYOSHIMA, Y
IWANE, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L218 - L220