LOW THRESHOLD CHANNELLED-SUBSTRATE BURIED CRESCENT INGAASP LASERS EMITTING AT 1.54 MU-M

被引：30

作者：

DEVLIN, WJ

WALLING, RH

FIDDYMENT, PJ

HOBBS, RE

MURRELL, D

SPILLETT, RE

STEVENTON, AG

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 18期

关键词：

D O I：

10.1049/el:19810457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：651 / 653

页数：3

共 5 条

[1] ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M [J].

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y ;

YAMAMOTO, T .

ELECTRONICS LETTERS, 1979, 15 (19) :606-607

[2] 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS [J].

ITAYA, Y ;

TANBUNEK, T ;

KISHINO, K ;

ARAI, S ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L141-L144

[3] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION [J].

NAGAI, H ;

NOGUCHI, Y ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

IWANE, G .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L218-L220

[4] CW OPERATION OF GAINASP STRIPE LASERS [J].

STEVENTON, AG ;

SPILLETT, RE ;

HOBBS, RE ;

BURT, MG ;

FIDDYMENT, PJ ;

COLLINS, JV .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :602-610

[5] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER EMITTING AT 1.55 MU-M [J].

TAKAHASHI, S ;

SAITO, H ;

IWANE, G .

ELECTRONICS LETTERS, 1980, 16 (24) :922-923

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