CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER EMITTING AT 1.55 MU-M

被引：8

作者：

TAKAHASHI, S

SAITO, H

IWANE, G

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 24期

关键词：

D O I：

10.1049/el:19800657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：922 / 923

页数：2

共 11 条

[1] ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M [J].

AKIBA, S ;

SAKAI, K ;

MATSUSHIMA, Y ;

YAMAMOTO, T .

ELECTRONICS LETTERS, 1979, 15 (19) :606-607

[2] CONSTRICTED DOUBLE-HETEROSTRUCTURE (ALGA)AS DIODE-LASERS [J].

BOTEZ, D ;

ZORY, P .

APPLIED PHYSICS LETTERS, 1978, 32 (04) :261-263

[3] ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS [J].

BURNHAM, RD ;

SCIFRES, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :510-511

[4] INVERTED-RIDGE-WAVEGUIDE DOUBLE-HETEROSTRUCTURE INJECTION-LASER WITH CURRENT AND LATERAL OPTICAL CONFINEMENT [J].

FIGUEROA, L ;

WANG, S .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :45-47

[5] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].

HIRAO, M ;

DOI, A ;

TSUJI, S ;

NAKAMURA, M ;

AIKI, K .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4539-4540

[6] 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS [J].

ITAYA, Y ;

TANBUNEK, T ;

KISHINO, K ;

ARAI, S ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L141-L144

[7]

KIRBY PA, 1976, J APPL PHYS, V47, P4578

[8] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT [J].

MUROTANI, T ;

OOMURA, E ;

HIGUCHI, H ;

NAMIZAKI, H ;

SUSAKI, W .

ELECTRONICS LETTERS, 1980, 16 (14) :566-568

[9] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION [J].

NAGAI, H ;

NOGUCHI, Y ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

IWANE, G .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L218-L220

[10]

TAKAHASHI S, UNPUBLISHED

← 1 2 →