INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT

被引：30

作者：

LOGAN, RA

VANDERZIEL, JP

TEMKIN, H

HENRY, CH

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 20期

关键词：

D O I：

10.1049/el:19820606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：895 / 896

页数：2

共 5 条

[1] SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (11) :2196-2204

[2] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].

HIRAO, M ;

DOI, A ;

TSUJI, S ;

NAKAMURA, M ;

AIKI, K .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4539-4540

[3] V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER [J].

ISHIKAWA, H ;

IMAI, H ;

TANAHASHI, T ;

NISHITANI, Y ;

TAKUSAGAWA, M ;

TAKAHEI, K .

ELECTRONICS LETTERS, 1981, 17 (13) :465-467

[4] BURIED-HETEROSTRUCTURE ALGAAS LASERS [J].

SAITO, K ;

ITO, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :205-215

[5] THERMAL-DECOMPOSITION OF INP AND ITS INFLUENCE ON ISO-EPITAXY [J].

TEMKIN, H ;

KERAMIDAS, VG ;

MAHAJAN, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1088-1091

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