DYNAMIC CHARACTERISTICS OF SEMI-INSULATING CURRENT BLOCKING LAYERS - APPLICATION TO MODULATION PERFORMANCE OF 1.3-MU-M INGAASP LASERS

被引：7

作者：

CHENG, WH ^{[1
]}

RENNER, D ^{[1
]}

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1570 / 1573

页数：4

共 12 条

[1] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
ASHLEY, KL
MILNES, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &
[2] HIGH-SPEED, POLYIMIDE-BASED SEMIINSULATING PLANAR BURIED HETEROSTRUCTURES
BOWERS, JE
KOREN, U
MILLER, BI
SOCCOLICH, C
JAN, WY
[J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1263 - 1265
[3] SEMI-INSULATING PROPERTIES OF FE-IMPLANTED INP .1. CURRENT-LIMITING PROPERTIES OF N+-SEMI-INSULATING-N+ STRUCTURES
CHENG, J
FORREST, SR
TELL, B
WILT, D
SCHWARTZ, B
WRIGHT, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1780 - 1786
[4] LOW-THRESHOLD AND WIDE-BANDWIDTH 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYERS
CHENG, WH
SU, CB
BUEHRING, KD
URE, JW
PERRACHIONE, D
RENNER, D
HESS, KL
ZEHR, SW
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (03) : 155 - 157
[5] HIGH-SPEED AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT BLOCKING LAYERS
CHENG, WH
SU, CB
BUEHRING, KD
HUANG, SY
POOLADDEJ, J
WOLF, D
PERRACHIONE, D
RENNER, D
HESS, KL
ZEHR, SW
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1783 - 1785
[6] SEMIINSULATING INP GROWN BY LOW-PRESSURE MOCVD
HESS, KL
ZEHR, SW
CHENG, WH
PERRACHIONE, D
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (02) : 127 - 131
[7] Lampert M.A., 1970, CURRENT INJECTION SO
[8] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MACRANDER, AT
LONG, JA
RIGGS, VG
BLOEMEKE, AF
JOHNSTON, WD
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1297 - 1298
[9] ULTRA-HIGH-SPEED MODULATION OF 1.3-MU-M INGAASP DIODE-LASERS
SU, CB
LANZISERA, VA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1568 - 1578
[10] SUGAWARA M, 1986, SEMIINSULATING 3 5 M, P597

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