DYNAMIC CHARACTERISTICS OF SEMI-INSULATING CURRENT BLOCKING LAYERS - APPLICATION TO MODULATION PERFORMANCE OF 1.3-MU-M INGAASP LASERS

被引：7

作者：

CHENG, WH ^{[1
]}

RENNER, D ^{[1
]}

HESS, KL ^{[1
]}

ZEHR, SW ^{[1
]}

机构：

[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1570 / 1573

页数：4

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SUGOU, S
KATO, Y
NISHIMOTO, H
KASAHARA, K
[J]. ELECTRONICS LETTERS, 1986, 22 (23) : 1214 - 1215
[12] INGAASP/INP PLANAR BURIED HETEROSTRUCTURE LASERS WITH SEMIINSULATING INP CURRENT BLOCKING LAYERS GROWN BY MOCVD
WAKAO, K
NAKAI, K
SANADA, T
KUNO, M
ODAGAWA, T
YAMAKOSHI, S
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 943 - 947