Metal-insulator transition in the Si(111)-(7x7) surface

被引：13

作者：

Flores, F

Yeyati, AL

Ortega, J

机构：

[1] Depto. Fis. Teor. Materia C., Facultad de Ciencias, Univ. Autónoma de Madrid

来源：

SURFACE REVIEW AND LETTERS | 1997年 / 4卷 / 02期

关键词：

D O I：

10.1142/S0218625X97000274

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A model Hamiltonian, based on LDA calculations, is introduced for describing the behavior of the electrons filling the dangling bonds of the Si(111)-(7 x 7) surface. Our analysis of this model shows that this surface has a metallic character at room temperature and exhibits a metal-insulator transition for a temperature between 120 and 180 K. These properties are associated with the localization of electrons on some elementary structures having either a dimer or a hexagonal ring geometry.

引用

页码：281 / 286

页数：6

共 16 条

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