SEMICONDUCTOR-TO-METAL TRANSITION IN AN ULTRATHIN INTERFACE - CS/GAAS(110)

被引:127
作者
DINARDO, NJ
WONG, TM
PLUMMER, EW
机构
[1] UNIV PENN, DEPT MAT SCI & ENGN, PHILADELPHIA, PA 19104 USA
[2] UNIV PENN, DEPT PHYS, PHILADELPHIA, PA 19104 USA
关键词
D O I
10.1103/PhysRevLett.65.2177
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electronic excitation spectra (0 Latin small letter h with stroke<4 eV) of an ultrathin Cs/GaAs(110) interface have been measured at various stages of development with electron-energy-loss spectroscopy. Spectral features which appear as a function of Cs coverage clearly identify the semiconductor-to-metal transition. The semiconducting interface observed up to one Cs layer is characterized as a highly correlated electronic systema two-dimensional Mott insulator. Interfacial metallization upon Cs multilayer growth is identified by a metallic-excitation continuum and a collective excitation related to the Cs surface plasmon. © 1990 The American Physical Society.
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页码:2177 / 2180
页数:4
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