LOW-TEMPERATURE ALKALI METAL-III-V INTERFACES - A STUDY OF METALLIZATION AND FERMI LEVEL MOVEMENT

被引：23

作者：

CAO, RY

MIYANO, K

KENDELEWICZ, T

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：919 / 924

页数：6

共 28 条

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[2] DUALITY IN FERMI-LEVEL PINNING AT CU/INP(110) AND AG/INP(110) INTERFACES
CAO, R
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KENDELEWICZ, T
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SPICER, WE
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[3] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
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LINDAU, I
SPICER, WE
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[4] METAL CLUSTER FORMATION ON GAAS(110) - A TEMPERATURE-DEPENDENCE STUDY
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SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1975 - 1982
[5] FERMI LEVEL MOVEMENT AT THE CS/GAAS (110)INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
LINDAU, I
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (13) : 1250 - 1252
[6] CAO R, UNPUB
[7] UNUSUAL LOW-TEMPERATURE BEHAVIOR OF FERMI LEVEL MOVEMENT AT THE SB/GAAS INTERFACE
CAO, RY
MIYANO, K
LINDAU, I
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 137 - 139
[8] ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110)
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[9] SOFT-X-RAY PHOTOEMISSION-STUDY OF CHEMISORPTION AND FERMI-LEVEL PINNING AT THE CS/GAAS(110) AND K/GAAS(110) INTERFACES
KENDELEWICZ, T
SOUKIASSIAN, P
BAKSHI, MH
HURYCH, Z
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7568 - 7575
[10] SOFT-X-RAY CORE LEVEL PHOTOEMISSION-STUDY OF THE CS INP INTERFACE FORMATION
KENDELEWICZ, T
SOUKIASSIAN, P
BAKSHI, MH
HURYCH, Z
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1331 - 1335

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