FERMI LEVEL MOVEMENT AT THE CS/GAAS (110)INTERFACES

被引：17

作者：

CAO, R

MIYANO, K

KENDELEWICZ, T

LINDAU, I

SPICER, WE

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 13期

关键词：

D O I：

10.1063/1.100730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1250 / 1252

页数：3

共 24 条

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[8] SOFT-X-RAY PHOTOEMISSION-STUDY OF CHEMISORPTION AND FERMI-LEVEL PINNING AT THE CS/GAAS(110) AND K/GAAS(110) INTERFACES [J].

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