DUALITY IN FERMI-LEVEL PINNING AT CU/INP(110) AND AG/INP(110) INTERFACES

被引：13

作者：

CAO, R

MIYANO, K

KENDELEWICZ, T

LINDAU, I

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.39.11146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11146 / 11149

页数：4

共 20 条

[1] THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS
ALLEN, RE
HUMPHREYS, TJ
DOW, JD
SANKEY, OF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 449 - 452
[2] THE AG-INP(110) INTERFACE - PHOTOEMISSION-STUDIES OF INTERFACIAL REACTIONS AND SCHOTTKY-BARRIER FORMATION
BABALOLA, IA
PETRO, WG
KENDELEWICZ, T
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6614 - 6622
[3] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
KATNANI, AD
STOFFEL, NG
DANIELS, R
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 564 - 569
[4] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
CHIN, KK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
[5] LACK OF TEMPERATURE-DEPENDENCE OF FERMI LEVEL PINNING AT THE CU/INP(110) INTERFACE - A COMPARISON WITH CU/GAAS AND OTHER SYSTEMS
CAO, R
MIYANO, K
KENDELEWICZ, T
LINDAU, I
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 210 - 212
[6] PHYSICAL NATURE OF THE INP NEAR-SURFACE DEFECT ACCEPTOR AND DONOR STATES
CHIN, KK
CAO, R
KENDELEWICZ, T
MIYANO, K
YEH, JJ
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1987, 36 (11): : 5914 - 5919
[7] CHIN KK, 1987, MATER RES SOC S P, V77, P429
[8] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110)
KENDELEWICZ, T
NEWMAN, N
LIST, RS
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1206 - 1211
[9] KENDELEWICZ T, 1983, PHYS REV B, V27, P3366, DOI 10.1103/PhysRevB.27.3366
[10] KENDELEWICZ T, IN PRESS J VAC SCI A

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