Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mossbauer spectroscopy

被引：9

作者：

Kruijer, S ^{[1
]}

Keune, W ^{[1
]}

Dobler, M ^{[1
]}

Reuther, H ^{[1
]}

机构：

[1] ROSSENDORF INC,FORSCHUNGSZENTRUM ROSSENDORF EV,INST IONENSTRAHLPHYS & MAT FORSCH,D-01314 DRESDEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 20期

关键词：

D O I：

10.1063/1.118996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe+ ions of 200 keV in energy were implanted into Si(111) at 350 degrees C with a dose of 7 x 10(17) cm(-2). The depth distribution of the two formed phases (epsilon-FeSi and beta-FeSi2) was investigated nondestructively up to a depth of about 800 Angstrom by depth-selective conversion-electron Mossbauer spectroscopy (DCEMS) in combination with depth-profiling (destructive) Auger electron spectroscopy (AES). Near the surface only beta-FeSi2 is formed, while a mixture of beta-FeSi2 and epsilon-FeSi is formed at larger depths. The Fe-concentration depth profile calculated from the DCEMS results is in good agreement with that measured by AES. (C) 1997 American Institute of Physics.

引用

页码：2696 / 2698

页数：3

共 25 条

[21] INTERNAL MAGNETIC FIELDS, ISOMER SHIFTS, AND RELATIVE ABUNDANCES OF VARIOUS FE SITES IN FESI ALLOYS [J].