Oxygen metastable defects in calcium titanate thin films

被引:5
作者
Haneda, H
Sakaguchi, I
Hishita, S
Ishigaki, T
Mitsuhashi, T
机构
[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Res Inorgan Mat, Japan Sci & technol Corp, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3050044, Japan
关键词
calcium; diffusion; metastable defect; oxide ion; perovskite; sputtering; thin film; titanate;
D O I
10.1023/A:1010125322433
中图分类号
O414.1 [热力学];
学科分类号
摘要
Metastable defects of oxygen in calcium titanate thin films with perovskite structure were studied. Thin films of calcium titanate were deposited by a magnetron sputtering method. The oxygen defects were evaluated, using the results of oxygen diffusion experiments. The thin film process had tendencies of creation of a large amount of oxygen point defects and the wide range of non equilibrium solid solution at room temperature. The crystal distortion was increasing with deviation from the stoichiometric composition. Although the metastable defects were decreasing due to the annealing, annealed samples had more oxygen defects in a few magnitude orders than single crystals.
引用
收藏
页码:675 / 681
页数:7
相关论文
共 14 条
[1]  
[Anonymous], TRANSPORT NONSTOICHI
[2]  
BALL C, 1988, AUST NUCL SCI TECHNO
[3]  
CRANK J, 1955, MATH DIFFUSION, P30
[4]  
DANNIELS J, 1976, PHILIPS RES REP, V31, P516
[5]  
HANEDA H, 1996, P 6 TOHW U INT S FUK, P251
[6]  
HANEDA H, UNPUB J APPL PHYS
[7]  
HANEDA H, 1986, J SOLID STATE CHEM, V68, P273
[8]   SOLUBILITY OF BAO IN BATIO3 [J].
HU, YH ;
HARMER, MP ;
SMYTH, DM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1985, 68 (07) :372-376
[9]   STRUCTURAL CHARACTERIZATION OF EPITAXIAL BATIO3 THIN-FILMS GROWN BY SPUTTER-DEPOSITION ON MGO(100) [J].
KIM, S ;
HISHITA, S ;
KANG, YM ;
BAIK, S .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5604-5608
[10]   Channeling studies of relaxed, epitaxial Si1-xGex films [J].
Monakhov, EV ;
Larsen, AN .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 108 (04) :399-402