Channeling studies of relaxed, epitaxial Si1-xGex films

[100]-axial and (110)-planar channeling studies of relaxed, epitaxial Si1-xGex (100) films have been performed for 0 less than or equal to x less than or equal to 0.37. The films were grown by MBE on graded buffer layers by the compositional grading technique and had threading dislocation densities less than or equal to 10(6) cm(-2). The [100]-axial and (110)-planar angular dependencies of the backscattered yield for samples with different compositions revealed a significant increase in the normalized minimum yield, chi(min), for increasing Ge concentration in conflict with a linear interpolation between values for Si and Ge; the values of the angular half-width, Psi(1/2), were in agreement with an interpolation between values for Si and Ge, An explanation of the observed effects is given.