ON THE NATURE OF CROSS-HATCH PATTERNS ON COMPOSITIONALLY GRADED SI1-XGEX ALLOY LAYERS

被引：114

作者：

SHIRYAEV, SY ^{[1
]}

JENSEN, F ^{[1
]}

PETERSEN, JW ^{[1
]}

机构：

[1] TECH UNIV DENMARK,MIC,DK-2800 LYNGBY,DENMARK

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of strain relaxation on the surface morphology of compositionally graded Si1-xGex layers grown at 550-degrees-C has been investigated by a combination of transmission electron and atomic force microscopy. By annealing unrelaxed graded layers, we have found that shear displacements caused by dislocation glide roughen the surface dramatically. This effect is attributed to the formation of a network of dislocation clusters which give rise to the pronounced slip-band pattern on the surface of the graded layers. It is shown that the surface plastic displacements produced by such a network during growth of the graded layer contribute significantly to the formation of the cross-hatch patterns.

引用

页码：3305 / 3307

页数：3

共 7 条

[1] RELAXED GEXSI1-X STRUCTURES FOR III-V INTEGRATION WITH SI AND HIGH MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI [J].