SELF-ADJUSTMENT OF MISFIT DISLOCATIONS IN COMPOSITIONALLY GRADED SI1-XGEX LAYERS

被引：16

作者：

SHIRYAEV, SY

机构：

[1] Institute of Physics and Astronomy, University of Aarhus, Aarhus C

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1993年 / 68卷 / 04期

关键词：

D O I：

10.1080/09500839308242412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model is developed which predicts an ordering of the dislocation multiplication sources in Si1-xGex/Si heteroepitaxial systems. This ordering results in an increased probability for threading dislocations to annihilate. It is shown that, following certain selection rules for dislocation multiplication, an infinite three-dimensional network of misfit dislocations can develop throughout the compositionally graded Si1-xGex layer. The model is consistent with existing experimental data.

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页码：195 / 200

页数：6

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