DISLOCATION MECHANISMS OF RELAXATION IN STRAINED EPITAXIAL-FILMS

[1] ALEXANDER H, 1986, DISLOCATIONS SOLIDS, V7, P115

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[4] SURFACE STRESS EFFECTS ON THE CRITICAL FILM THICKNESS FOR EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 55 (12) : 1197 - 1198

[5] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 642 - 644

[6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[7] DISLOCATION NUCLEATION NEAR THE CRITICAL THICKNESS IN GESI/SI STRAINED LAYERS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (05): : 1059 - 1073

[8] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[9] NUCLEATION MECHANISMS AND THE ELIMINATION OF MISFIT DISLOCATIONS AT MISMATCHED INTERFACES BY REDUCTION IN GROWTH AREA [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2220 - 2237

[10] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225

[1] ALEXANDER H, 1986, DISLOCATIONS SOLIDS, V7, P115

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[4] SURFACE STRESS EFFECTS ON THE CRITICAL FILM THICKNESS FOR EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 55 (12) : 1197 - 1198

[5] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 642 - 644

[6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[7] DISLOCATION NUCLEATION NEAR THE CRITICAL THICKNESS IN GESI/SI STRAINED LAYERS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (05): : 1059 - 1073

[8] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[9] NUCLEATION MECHANISMS AND THE ELIMINATION OF MISFIT DISLOCATIONS AT MISMATCHED INTERFACES BY REDUCTION IN GROWTH AREA [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2220 - 2237

[10] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225