DISLOCATIONS IN VAPOR-GROWN COMPOSITIONALLY GRADED (IN,GA)P

被引：52

作者：

ABRAHAMS, MS ^{[1
]}

BUIOCCHI, CJ ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.321409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4259 / 4270

页数：12

共 18 条

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[4] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

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BLANC, J .

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[5] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[6] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225

[7]

GOLDSTEIN B, 1960, PHYS REV, V118, P1024

[8]

HIRTH JP, 1968, THEORY DISLOCATIONS, P684

[9]

HIRTH JP, 1968, THEORY DISLOCATIONS, P513

[10]

MADELUNG O, 1964, PHYSICS 3V COMPOUNDS, P250

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