Surface effect on domain wall width in ferroelectrics

被引:63
作者
Eliseev, Eugene A. [1 ]
Morozovska, Anna N. [1 ,6 ]
Kalinin, Sergei V. [2 ,3 ]
Li, Yulan [4 ]
Shen, Jie [5 ]
Glinchuk, Maya D. [1 ]
Chen, Long-Qing [4 ]
Gopalan, Venkatraman [4 ]
机构
[1] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine
[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[3] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[5] Purdue Univ, Dept Math, W Lafayette, IN 47907 USA
[6] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
基金
美国国家科学基金会;
关键词
FILMS; DEPOLARIZATION;
D O I
10.1063/1.3236644
中图分类号
O59 [应用物理学];
学科分类号
070305 [高分子化学与物理];
摘要
We study the effect of the depolarization field on a domain wall structure near the surface of a ferroelectric. Since in real situation bound and screening charges form an electric double layer, the breaking of this layer by the domain wall induces stray depolarization field, which in turn changes the domain wall structure. Power law decay of the stray field results in the power law of polarization saturation near the surface, as compared to exponential saturation in the bulk. Obtained results predict that the surface broadening of ferroelectric domain walls appeared near Curie temperature as well as describe domain wall depth profile in weak ferroelectrics. We qualitatively describe extra-broad domain walls near LiNbO3 and LiTaO3 surfaces observed experimentally at room temperature, which probably originate at high temperatures but did not fully relax their width with temperature decrease allowing for lattice pinning and defect centers. Thus results have broad implication for fundamental issues such as maximal information storage density in ferroelectric data storage, domain wall pinning mechanisms at surfaces and interfaces, and nucleation dynamics. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3236644]
引用
收藏
页数:6
相关论文
共 19 条
[1]
Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films [J].
Bratkovsky, AM ;
Levanyuk, AP .
PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3177-3180
[2]
THEORY OF TETRAGONAL TWIN STRUCTURES IN FERROELECTRIC PEROVSKITES WITH A 1ST-ORDER PHASE-TRANSITION [J].
CAO, WW ;
CROSS, LE .
PHYSICAL REVIEW B, 1991, 44 (01) :5-12
[3]
Wall thickness dependence of the scaling law for ferroic stripe domains [J].
Catalan, G. ;
Scott, J. F. ;
Schilling, A. ;
Gregg, J. M. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (02)
[4]
Chenskii E. V., 1982, Soviet Physics - JETP, V56, P618
[5]
Atomic dipole moment distribution of si atoms on a Si(111)-(7x7) surface studied using noncontact scanning nonlinear dielectric microscopy [J].
Cho, Yasuo ;
Hirose, Ryusuke .
PHYSICAL REVIEW LETTERS, 2007, 99 (18)
[6]
Cross-sectional observation of nanodomain dots formed in both congruent and stoichiometric LiTaO3 crystals [J].
Daimon, Yasuhiro ;
Cho, Yasuo .
APPLIED PHYSICS LETTERS, 2007, 90 (19)
[7]
Cross-sectional observation of nano-domain dots formed in congruent single-crystal LiTaO3 [J].
Damon, Yasuhiro ;
Cho, Yasuo .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (46-50) :L1304-L1306
[8]
Darinskii B. M., 1989, Soviet Physics - Solid State, V31
[9]
Glinchuk M. D., 2001, Integrated Ferroelectrics, V38, P101, DOI 10.1080/10584580108016922
[10]
Ferroelectric thin film properties - Depolarization field and renormalization of a "bulk" free energy coefficients [J].
Glinchuk, MD ;
Eliseev, EA ;
Stephanovich, VA ;
Farhi, R .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) :1150-1159