Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction

被引:47
作者
Pan, Z [1 ]
Wang, YT [1 ]
Zhuang, Y [1 ]
Lin, YW [1 ]
Zhou, ZQ [1 ]
Li, LH [1 ]
Wu, RH [1 ]
Wang, QM [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
关键词
D O I
10.1063/1.124329
中图分类号
O59 [应用物理学];
学科分类号
摘要
Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1-x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. (C) 1999 American Institute of Physics. [S0003-6951(99)00828-1].
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页码:223 / 225
页数:3
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