Poly[3-(butylthio)thiophene] Langmuir-Blodgett films as selective solid state chemiresistors for nitrogen dioxide

被引:18
作者
Rella, R
Siciliano, P
Quaranta, F
Primo, T
Valli, L
Schenetti, L
机构
[1] Univ Lecce, Inst Mat Elettron, CNR, I-73100 Lecce, Italy
[2] Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy
[3] Univ Modena, Dipartimento Chim, I-41100 Modena, Italy
关键词
conjugated polymer; chemical sensors; Langmuir-Blodgett films; thin films;
D O I
10.1016/S0927-7757(01)01008-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Films of poly[3-(butylthio)thiophene] were prepared via Langmuir-Blodgett (LB) deposition for applications in gas sensor devices. A description of the LB deposition or the sensing layer starting from a mixture of polymer and arachidic acid is given. Alumina substrates equipped with gold interdigitated electrodes have been used. In particular, the samples so prepared show variation in the electrical conductivity when exposed to NO2 oxidising agent at a working temperature of about 80 degreesC. Selectivity towards NO2 with respect to other different gases like ammonia, carbon monoxide, ethanol, methanol and methane has been evaluated. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:829 / 833
页数:5
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