Preparation of piezoelectric-coefficient modulated multilayer film ZnO/Al2O3 and its ultrahigh frequency resonance

被引：14

作者：

Hu, WS ^{[1
]}

Liu, ZG ^{[1
]}

Wu, RX ^{[1
]}

Chen, YF ^{[1
]}

Ji, W ^{[1
]}

Yu, T ^{[1
]}

Feng, D ^{[1
]}

机构：

[1] NANJING UNIV, DEPT ELECT SCI & ENGN, NANJING 210093, PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.119605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multilayer films composed of piezoelectrically active ZnO and inactive Al2O3 layers were prepared on silicon by a pulsed laser deposition technique. The ZnO layers were completely (001) textured to generate a single piezoelectric coefficient d(33) perpendicular to the substrate surface and the Al2O3 layers were amorphous at 375 degrees C. The interfacial sharpness and the film orientation were analyzed by low and high angle x-ray diffraction theta-2 theta scanning. High frequency resonance of 10.6 GHz was measured and higher values up to 100 GHz are expected in the multilayer films with periods 320 nm or smaller. (C) 1997 American Institute of Physics.

引用

页码：548 / 550

页数：3

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