In-situ characterization of oxide growth for fabricating spin-dependent tunnel junctions

被引：5

作者：

Wee, ATA ^{[1
]}

Wang, SX

Sin, K

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Read Rite Corp, Fremont, CA 94539 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

spin-dependent tunneling junction; tunneling magnetoresistance; plasma oxidation; in-situ resistive measurement; generalized Mott-Cabrera law;

D O I：

10.1109/20.801043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni45Fe55/Al2O3/Ni45Fe55 spin dependent tunneling junctions with an MR ratio of similar to 16.5 % have been fabricated, The Al2O3 barriers are formed by plasma oxidation, and the oxide growth is characterized by in-situ resistive measurements. The oxide barrier growth mode is greatly affected by process parameters, including shutter configuration, gas composition, and plasma power, The changes in oxide thickness can be modeled by a combination of the linear growth law and the generalized Mott-Cabrera law.

引用

页码：2949 / 2951

页数：3

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