Scale-up of a cluster jet laser plasma source for Extreme Ultraviolet Lithography

被引:30
作者
Kubiak, GD [1 ]
Bernardez, LJ [1 ]
Krenz, K [1 ]
Sweatt, WC [1 ]
机构
[1] Sandia Natl Labs, Livermore, CA 94550 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2 | 1999年 / 3676卷
关键词
D O I
10.1117/12.351142
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A high-average-power extreme ultraviolet (EUV) source based on a laser plasma cluster jet is being developed for EUV lithography. The source employs a cooled supersonic nozzle expansion to produce a dense beam of Xe clusters as the plasma source target. The cluster beam is irradiated with a pulsed laser to create a high-temperature plasma radiating efficiently in the EUV spectral region. To accommodate drive laser repetition rates of up to 6000 Hz, a continuous jet expansion with full Xe gas recycling is employed, rather than earlier pulsed jet expansions. The continuous jet employs an efficient high-throughput pumping scheme to minimize the ambient pressure of highly-attenuating Xe gas. Source power scale-up is achieved by increasing laser repetition rate, keeping laser pulse parameters nominally fixed. In the first phase of EUV power scale-up, the continuous cluster jet source has been integrated with a 200 W laser driver operating at repetition rates up to 500 Hz. With this system, a laser-to-EUV conversion efficiency of 0.69% is achieved. In the second phase, the jet is being integrated with a 1700 W diode-pumped solid state laser driver operating at repetition rates up to 6000 Hz. A brief description of the 1700 W laser system and its integration with the continuous cluster jet are discussed.
引用
收藏
页码:669 / 678
页数:4
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