Investigation of FIB assisted CoSi2 nanowire growth

被引:10
作者
Bischoff, L [1 ]
Schmidt, B [1 ]
Akhmadaliev, C [1 ]
Mücklich, A [1 ]
机构
[1] Rossendorf Inc, Inst Ion Beam Phys & Mat Res, Res Ctr, D-01314 Dresden, Germany
关键词
focused ion beam; cobaltdisilicide; ion beam synthesis; nanowire;
D O I
10.1016/j.mee.2006.01.129
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ion beam synthesis process of CoSi2 by writing stoichiometric ion implantation and subsequent annealing has been studied. For this a Focused Ion Beam (FIB), equipped with a Co36Nd64 alloy liquid metal ion source, was applied. Si(I 0 0) and (111) wafers were implanted with 60 keV Co2+ ions in the dose range of 2 x 10(16) -2 x 10(17) cm(-2). The implantation parameters, like pixel dwell time, relaxation time, dose rate as well as the pixel overlapping factor were investigated. During subsequent annealing CoSi2 nanostructures with dimensions down to 10 nm have been achieved. To investigate the silicide formation more in detail the annealing process was done in situ in a transmission electron microscope (TEM) on a pre-dimpled and FIB implanted samples of a Si(111). The formation of the cobalt silicide nano-crystals was monitored by plane-view TEM imaging during a 30 min heat treatment at 600 degrees C in vacuum. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:800 / 803
页数:4
相关论文
共 15 条
[1]   NICKEL AND COBALT SILICIDE FORMATION BY BROAD AND FOCUSED ION-BEAM IMPLANTATION [J].
AOKI, T ;
GAMO, K ;
NAMBA, S ;
SHIOKAWA, T ;
TOYODA, K ;
OKABAYASHI, H ;
MORI, H ;
FUJITA, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) :291-296
[2]   COSI2 MICROSTRUCTURES BY MEANS OF A HIGH-CURRENT FOCUSED ION-BEAM [J].
BISCHOFF, L ;
TEICHERT, J ;
HESSE, E ;
PANKNIN, D ;
SKORUPA, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3523-3527
[3]   Single-crystalline CoSi2 layer formation by focused ion beam synthesis [J].
Hausmann, S ;
Bischoff, L ;
Teichert, J ;
Voelskow, M ;
Möller, W .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (12B) :7148-7150
[4]   Dwell-time related effects in focused ion beam synthesis of cobalt disilicide [J].
Hausmann, S ;
Bischoff, L ;
Teichert, J ;
Voelskow, M ;
Möller, W .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :57-62
[5]   DEVELOPMENT OF A COBALT LIQUID ALLOY ION-SOURCE [J].
HESSE, E ;
BISCHOFF, L ;
TEICHERT, J .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1994, 27 (02) :427-428
[6]   FORMATION OF CONTINUOUS COSI2 LAYERS BY HIGH CO DOSE IMPLANTATION INTO SI(100) [J].
HULL, R ;
WHITE, AE ;
SHORT, KT ;
BONAR, JM .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1629-1634
[7]   Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies [J].
Kittl, JA ;
Hong, QZ .
THIN SOLID FILMS, 1998, 320 (01) :110-121
[8]   Growth of CoSi2 on Si(001) by reactive deposition epitaxy -: art. no. 044909 [J].
Lim, CW ;
Shin, CS ;
Gall, D ;
Zuo, JM ;
Petrov, I ;
Greene, JE .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
[9]  
Maier SA, 2001, ADV MATER, V13, P1501, DOI 10.1002/1521-4095(200110)13:19<1501::AID-ADMA1501>3.0.CO
[10]  
2-Z