Switching properties of self-assembled ferroelectric memory cells

被引：90

作者：

Alexe, M

Gruverman, A

Harnagea, C

Zakharov, ND

Pignolet, A

Hesse, D

Scott, JF

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany

[2] Sony Corp, Frontier Sci Labs, Yokohama, Kanagawa 2400005, Japan

[3] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report on the switching properties of an ordered system of Bi4Ti3O12 ferroelectric memory cells of an average lateral size of 0.18 mu m formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 mu m size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode. (C) 1999 American Institute of Physics. [S0003-6951(99)00334-4].

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页码：1158 / 1160

页数：3

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