Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

被引：16

作者：

Benyoucef, M

Kuball, M

Hill, G

Wisnom, M

Beaumont, B

Gibart, P

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Univ Bristol, Dept Aerosp Engn, Bristol BS8 1TR, Avon, England

[3] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 25期

关键词：

D O I：

10.1063/1.1426276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the finite element analysis of stress distribution at the coalescence boundary in epitaxial lateral overgrown (ELO) GaN related to voids. Different void geometries were considered in our model to investigate the influence of their size/shape on the stress distribution. Large compressive stress is localized in the vicinity of the voids, also an increased tensile stress is present at the corners of the SiN mask. Confocal micro-Raman mapping experiments confirm the presence of increased stress at the coalescence boundary of ELO GaN. (C) 2001 American Institute of Physics.

引用

页码：4127 / 4129

页数：3

共 19 条

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