Silicon dopant imaging by dissipation force microscopy

被引：58

作者：

Stowe, TD ^{[1
]}

Kenny, TW

Thomson, DJ

Rugar, D

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[3] Univ Manitoba, Dept Elect & Comp Engn, Winnipeg, MB R3T 5V6, Canada

[4] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 10(14)-10(18) cm(-3). Dopant imaging with 150 nm spatial resolution was demonstrated. (C) 1999 American Institute of Physics. [S0003-6951(99)01544-2].

引用

页码：2785 / 2787

页数：3

共 13 条

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