Radiation characteristics of injection lasers based on vertically coupled quantum dots

被引：17

作者：

Zaitsev, SV ^{[1
]}

Gordeev, NY ^{[1
]}

Sherniakov, YM ^{[1
]}

Ustinov, VM ^{[1
]}

Zhukov, AE ^{[1
]}

Egorov, AY ^{[1
]}

Maximov, MV ^{[1
]}

Kopev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

Ledentsov, NN ^{[1
]}

Kirstaedter, N ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 21卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

injection laser; quantum dot; quantum efficiency;

D O I：

10.1006/spmi.1996.0197

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied injection lasers based on InGaAs/GaAs vertically coupled quantum dots (QD) grown by molecular beam epitaxy. The threshold current density decreases by one order of magnitude down to 90 A cm(-2) (300 K) with an increase of the number of QD stacks (N) up to 10. For N greater than or equal to 3 lasing occurs via the QD ground state up to room temperature. Differential efficiency increases with N up to 50%. No change in range of high temperature stability of threshold current density (J(th)) was observed, while the characteristic temperature (T-0) measured at 300 K increases from 60 to 120 K. Using InGaAs-AlGaAs QD with higher localization energy allowed us to decrease J(th) down to 60 A cm(-2) and to increase the differential efficiency up to 70%. (C) 1997 Academic Press Limited.

引用

页码：559 / 564

页数：6

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