Hall effect in c-axis-oriented MgB2 thin films -: art. no. 134508

被引：36

作者：

Kang, WN ^{[1
]}

Kim, HJ

Choi, EM

Kim, HJ

Kim, KHP

Lee, HS

Lee, SI

机构：

[1] Pohang Univ Sci & Technol, Natl Creat Res Initiat Ctr Superconduct, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.65.134508

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the longitudinal resistivity and the Hall resistivity in the ab plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R-H) behaves as R(H)similar toT with increasing temperature (T) up to 130 K and then deviates from that linear T dependence at higher temperatures. The T-2 dependence of the cotangent of the Hall angle is only observed above 130 K. The mixed-state Hall effect reveals no sign anomaly over a wide range of current densities from 10(2) to 10(4) A/cm(2) and for magnetic fields up to 5 T.

引用

页码：1 / 4

页数：4

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