SLITS simulator: Modeling and simulation of e-beam/deep-ultraviolet exposure and silylation

被引：6

作者：

McDonagh, D ^{[1
]}

Arshak, KI ^{[1
]}

Arshak, A ^{[1
]}

Braddell, J ^{[1
]}

机构：

[1] NATL MICROELECTR RES CTR, CORK, IRELAND

来源：

OPTICAL ENGINEERING | 1996年 / 35卷 / 01期

关键词：

PRIME process; lithography modeling; nanolithography; silylation; dry development;

D O I：

10.1117/1.600931

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The positive resist image by dry etching (PRIME) process is a high-resolution positive resist system incorporating deep-UV (DUV)/e-beam exposure, silylation (gas/liquid phase), and dry development, A new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2-D simulator SLITS (simulation of lithography on topographic substrates) to simulate the silylation and dry-developed profiles in the PRIME process. The silylation and dry-developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures, Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DUV exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth.

引用

页码：277 / 283

页数：7