Effects of Ag/indium tin oxide contact to a SiC doping layer on performance of Si nanocrystal light-emitting diodes

被引：14

作者：

Huh, C ^{[1
]}

Park, NM ^{[1
]}

Shin, JH ^{[1
]}

Kim, KH ^{[1
]}

Kim, TY ^{[1
]}

Cho, KS ^{[1
]}

Sung, GY ^{[1
]}

机构：

[1] IT Convergence Technol Res Div, Elect & Telecommun Res Inst, Taejon 305700, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

关键词：

D O I：

10.1063/1.2191409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effects of a very thin Ag (2.5 nm) interlayer between the indium tin oxide (ITO) current spreading layer and a SiC doping layer on silicon nanocrystals (nc-Si) embedded in silicon nitride film on the electrical and optical performance of the light-emitting diodes (LEDs). The forward voltage at a current of 20 mA of the nc-Si LED with a Ag interlayer was decreased by 2.5 V compared to that of the nc-Si LED without one due to the decrease in the contact resistance. In addition, the light output power of the nc-Si LED with a Ag interlayer was also enhanced by 40%. This result strongly indicates that the Ag/ITO contact scheme can serve as a highly promising contact scheme to a SiC film for the realization of the nc-Si LEDs with a high efficiency. (c) 2006 American Institute of Physics.

引用

页数：3

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