High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer

被引：162

作者：

Cho, KS

Park, NM

Kim, TY

Kim, KH

Sung, GY ^{[1
]}

Shin, JH

机构：

[1] Elect & Telecommun Res Inst, Future Technol Res Div, Taejon 305350, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.1866638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition. Under forward biased condition, orange electroluminescence (EL) with its peak wavelength at about 600 nm was observed at room temperature. The peak position of the EL is very similar to that of the photoluminescence (PL) and the emitted EL intensity is proportional to the current density passing through the device. We suggest that the observed EL is originated from electron-hole pair recombination in nc-Si. By using indium tin oxide and n-type SiC layer combination as a transparent doping layer, we obtained high external quantum efficiency greater than 1.6%. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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