Scanning tunneling potentiometry study of electron reflectivity of a single grain boundary in thin gold films

被引:7
作者
Schneider, MA
Wenderoth, M
Heinrich, AJ
Rosentreter, MA
Ulbrich, RG
机构
[1] Universität Göttingen, IV. Physikalisches Institut, D-37073 Göttingen
关键词
grain boundary scattering; scanning tunneling microscopy (STM); scanning tunneling potentiometry (STP); thin film resistivity;
D O I
10.1007/s11664-997-0106-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spatial variations of the local electric field in current-carrying thin gold films were studied with a scanning tunneling microscope on a nanometer scale. With a refined scanning tunneling potentiometry technique, it was possible to determine the local electric fields within single grains. At grain boundaries, we observe potential drops on length scales of less than 1 nm which exceed the potential difference within a grain greatly. We interpret our findings by applying a theory that models grain boundaries as barriers with a reflectivity R for the conduction electrons. With the assumption of isotropic background scattering within each grain, we determine the local current-density j(x,y) that passes a grain boundary. From that, we obtain the reflectivity of individual grain boundaries and find values of R = 0.7 to R = 0.9 which is much higher than expected from macroscopic experiments.
引用
收藏
页码:383 / 386
页数:4
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