Logic circuit elements using single-electron tunnelling transistors

被引：29

作者：

Stone, NJ ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 21期

关键词：

D O I：

10.1049/el:19991231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Logic elements have been demonstrated using single-electron tunnelling transistors. The transistors are biased at different positions in the conductance oscillation cycle so that they are analogous to either n-type or p-type transistors. The circuit operation is stable at a temperature of 1.6 K despite the low gain of thr transistors.

引用

页码：1883 / 1884

页数：2

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