Kinetic analysis of interfacial diffusion accompanied by intermetallic compound formation

被引:24
作者
Kim, PG [1 ]
Jang, JW
Tu, KN
Frear, DR
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] SEMATECH, Austin, TX 78741 USA
关键词
D O I
10.1063/1.370880
中图分类号
O59 [应用物理学];
学科分类号
摘要
In interfacial reactions, a short-circuit diffusion along grain boundaries or interfaces can be accompanied by intermetallic compound formation. The compound penetrates the grain boundaries or the interfaces. This is a generic reliability issue for layered thin film structures because it causes a decrease in adhesion strength of the thin films. We have modified Fisher's grain boundary diffusion model to include this reactive kinetic process, and an analytical solution was obtained. A t(1/4) dependence of penetration is found, the same as Fisher's model. The important kinetic parameters in the solutions are a diffusion coefficient along the short-circuit path, an intrinsic interdiffusion coefficient in the compound, and a partition coefficient. A comparison between the calculated and measured data from the lateral penetration of eutectic SnPb solder along the interface between electroless Ni and oxysilicon nitride dielectric, accompanied by Ni3Sn4 compound formation, is given. (C) 1999 American Institute of Physics. [S0021-8979(99)06715-8].
引用
收藏
页码:1266 / 1272
页数:7
相关论文
共 26 条
[1]   THE STRUCTURE OF ELECTROLESS NI-P FILMS AS A FUNCTION OF COMPOSITION [J].
ALLEN, RM ;
VANDERSANDE, JB .
SCRIPTA METALLURGICA, 1982, 16 (10) :1161-1164
[2]  
Aschenbrenner R., 1997, IEEE Transactions on Components, Packaging & Manufacturing Technology, Part C (Manufacturing), V20, P95, DOI 10.1109/3476.622879
[3]  
BALLUFFI RW, 1975, LOW TEMPERATURE DIFF, P373
[4]   STUDIES OF SLT CHIP TERMINAL METALLURGY [J].
BERRY, BS ;
AMES, I .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (03) :286-&
[5]   ON SPINODAL DECOMPOSITION [J].
CAHN, JW .
ACTA METALLURGICA, 1961, 9 (09) :795-801
[6]  
Chang CS, 1998, IEEE CIRCUITS DEVICE, V14, P45, DOI 10.1109/101.666591
[8]   GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES [J].
GOSELE, U ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3252-3260
[9]  
Hansen M., 1958, CONSTITUTION BINARY, DOI DOI 10.1149/1.2428700
[10]  
HILLIARD JE, 1970, PHASE TRANSFORMATION, pCH12