GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES

被引:477
作者
GOSELE, U
TU, KN
机构
关键词
D O I
10.1063/1.331028
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3252 / 3260
页数:9
相关论文
共 39 条
[1]  
BAGLIN JEE, COMMUNICATION
[2]  
Baglin JEE, 1980, THIN FILM INTERFACES, P341
[3]  
BAGLIN JEE, 1978, THIN FILM PHENOMENA
[4]   SPECIAL ASPECTS OF DIFFUSION IN THIN-FILMS [J].
BALLUFFI, RW ;
BLAKELY, JM .
THIN SOLID FILMS, 1975, 25 (02) :363-392
[5]   ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION [J].
BINDELL, JB ;
COLBY, JW ;
WONSIDLER, DR ;
POATE, JM ;
CONLEY, DK ;
TISONE, TC .
THIN SOLID FILMS, 1976, 37 (03) :441-452
[6]   EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES [J].
BLATTNER, RJ ;
EVANS, CA ;
LAU, SS ;
MAYER, JW ;
ULLRICH, BM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1732-1736
[7]  
CAMPISANO SU, 1978, THIN FILM PHENOMENA, P129
[8]   FORMATION OF NI AND PT SILICIDE 1ST PHASE - DOMINANT ROLE OF REACTION-KINETICS [J].
CANALI, C ;
CATELLANI, F ;
OTTAVIANI, G ;
PRUDENZIATI, M .
APPLIED PHYSICS LETTERS, 1978, 33 (02) :187-190
[9]   PHASE-DIAGRAMS AND METAL-RICH SILICIDE FORMATION [J].
CANALI, C ;
MAJNI, G ;
OTTAVIANI, G ;
CELOTTI, G .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :255-258
[10]   SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES [J].
COE, DJ ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) :965-972