Barium-strontium-titanate thin films for application in radio-frequency-microelectromechanical capacitive switches

被引：27

作者：

Kirchoefer, SW ^{[1
]}

Cukauskas, EJ ^{[1
]}

Barker, NS ^{[1
]}

Newman, HS ^{[1
]}

Chang, W ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1450263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the application of barium-strontium-titanate (BST) thin film oxides as the dielectric layer in radio-frequency-microelectromechanical system (rf-MEMS) capacitive switches. BST thin films deposited at ambient temperature by off-axis sputtering have been employed for application in rf-MEMS switches. Their dielectric properties have been characterized in the frequency range from 1 to 20 GHz both on magnesium oxide and on gold metal films. Switches have been fabricated which demonstrate promising on-state capacitance and good dielectric breakdown properties. Dielectric breakdown in excess of 400 kV/cm has been measured on switches cycled in excess of 2000 times during testing. (C) 2002 American Institute of Physics.

引用

页码：1255 / 1257

页数：3

共 8 条

[1]

Barker NS, 1998, IEEE T MICROW THEORY, V46, P1881, DOI 10.1109/22.734503

[2] Low-loss Ba0.5Sr0.5TiO3 thin films by inverted cylindrical magnetron sputtering [J].