Structural and microwave properties of (Ba, Sr)TiO3 films grown by pulsed laser deposition

被引:33
作者
Kim, WJ
Chang, W
Qadri, SB
Pond, JM
Kirchoefer, SW
Horwitz, JS
Chrisey, DB
机构
[1] SFA Inc, Largo, MD 20774 USA
[2] USN, Res Lab, Washington, DC 20375 USA
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 03期
关键词
D O I
10.1007/s003390050052
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The relationship between the structure and the microwave dielectric properties of epitaxial Ba0.5Sr0.5TiO3 (BST) films has been investigated. Single-phase BST films (40-160 nm) have been deposited onto (100) MgO substrates by pulsed laser deposition. As-deposited films show a significant tetragonal distortion. The in-plane lattice parameters (a) are always larger than the surface normal lattice parameters (c). The tetragonal distortion depends on the thickness of the films and the post-deposition annealing conditions. Films annealed at 900 degrees C show less tetragonal distortion than the as-deposited film and the films annealed at higher temperatures. The distortion in the film is due to stress caused by the lattice mismatch and thermal expansion coefficient differences between the film and the substrate. The dielectric constant and its change with de bias voltage of BST films on MgO at microwave frequencies increase with increasing annealing temperature from 900 degrees C to 1200 degrees C, which corresponds to an increase in the tetragonal distortion.
引用
收藏
页码:313 / 316
页数:4
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