Deuterium sintering of silicon-on-insulator structures:: D diffusion and replacement reactions at the SiO2/Si interface

被引：9

作者：

Wallace, RM ^{[1
]}

Chen, PJ ^{[1
]}

Archer, LB ^{[1
]}

Anthony, JM ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.590885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use dynamic secondary ion mass spectrometry (SIMS) to examine the mechanism of H (D) incorporation into and retention within a buried SiO2 film at 625 degrees C. We find that diffusion of H-2(D-2) through the Si/SiO2/Si structure at this temperature is facile and that isotopic exchange occurs at the interfaces upon subsequent forming gas anneals at 625 degrees C. A detailed examination of the isotopic exchange process indicates that the interfaces do not exhibit equivalent behavior. We also describe the artifacts observed in the SLMS profiles by comparing positive and negative secondary ion profiles. (C) 1999 American Vacuum Society.

引用

页码：2153 / 2162

页数：10

共 33 条

[1]

AUBERTONHERVE AJ, 1997, NATURE, V386, P177

[2] CHEMICAL-KINETICS OF HYDROGEN AND (111) SI-SIO2 INTERFACE DEFECTS [J].