Effect of localized vibrations on the Si surface concentrations of H and D

被引：13

作者：

Ipatova, IP ^{[1
]}

Chikalova-Luzina, OP

Hess, K

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.366762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The equilibrium concentration of passivating adatoms in the system of Si crystal plus the gas of H-2 (or D-2) molecules is calculated The effect of adatom localized vibrations on the equilibrium concentration is taken into account. It is shown that the substitution of D for H loads to an increase of the adatom concentration by 1-1.5 orders of magnitude. (C) 1998 American Institute of Physics. [S0021-8979(98)00402-2].

引用

页码：814 / 819

页数：6

共 14 条

[1] SELF-CONSISTENT QUANTUM-THEORY OF CHEMISORPTION - H ON SI(111)
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (13) : 806 - 809
[2] Bilz H., 1979, PHONON DISPERSION RE
[3] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY
BURROWS, VA
CHABAL, YJ
HIGASHI, GS
RAGHAVACHARI, K
CHRISTMAN, SB
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 998 - 1000
[4] PHONON CONTRIBUTION TO FREE-ENERGY OF INTERACTING ADATOM PAIRS
CUNNINGHAM, SL
DOBRZYNSKI, L
MARADUDIN, AA
[J]. PHYSICAL REVIEW B, 1973, 7 (10) : 4643 - 4651
[5] GOLDAMMER W, 1984, SURF SCI, P39
[6] Harrison W. A., 1970, SOLID STATE THEORY
[7] JACOB P, 1991, APPL PHS LETT, V59, P867
[8] Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability
Kizilyalli, IC
Lyding, JW
Hess, K
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) : 81 - 83
[9] LANDAU LD, 1958, STATISTICAL PHYSICS, pCH9
[10] Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
Lyding, JW
Hess, K
Kizilyalli, IC
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (18) : 2526 - 2528

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