Band-filling in InP dots: Single dot spectroscopy and carrier dynamics

被引：4

作者：

Pistol, ME

Castrillo, P

Hessman, D

Anand, S

Carlsson, N

Seifert, W

Samuelson, L

机构：

[1] Department of Solid State Physics, Lund University, Box 118

[2] Dept. of Electricity and Electronics, University of Valladolid, E-47011 Valladolid, Prado de la Magdalena s/n

来源：

SOLID-STATE ELECTRONICS | 1996年 / 40卷 / 1-8期

关键词：

D O I：

10.1016/0038-1101(95)00328-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured band-filling in InP dots inbetween GaInP barriers. We find that band-filling occurs at very low optical power densities. About 200 times less optical power density is required for the InP dots, compared with quantum wells, for the same amount of band-filling. We have measured photon emission from single dots and also here we find band-filling. The time-evolution of the emission has been followed and also been modelled using a simple model. Good agreement between theory and experiment is found. The capture time into the dots is around 3 ns and the decay time constant is about 1 ns.

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收藏

页码：357 / 361

页数：5

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