Anisotropic magnetoresistance in epitaxial (110) manganite films

被引：16

作者：

Infante, I. C.

Laukhin, V.

Sanchez, F.

Fontcuberta, J.

Melnikov, O.

Gorbenko, O. Yu

Kaul, A. R.

机构：

[1] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain

[2] ICREA, Barcelona, Spain

[3] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2150812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on measurements of anisotropic magnetoresistance (AMR) (similar to rho(parallel to)-rho(perpendicular to)) along two orthogonal directions ([001] and [1-10]) of a manganite (La0.95Ag0.05MnO3) epitaxial thin film grown on a (011) SrTiO3 substrate. We show that AMR along [001] is negative whereas along the [1-10] direction is positive at low temperature, changing to negative when approaching the Curie temperature. We argue that temperature dependent anisotropic spin-orbit coupling and spin-dependent scattering effects could be at the basis of these experimental results. (C) 2006 American Institute of Physics.

引用

页数：3

共 13 条

[1] Anisotropic electrical transport in epitaxial La2/3Ca1/3MnO3 thin films [J].

Amaral, VS ;

Lourenço, AACS ;

Araújo, JP ;

Pereira, AM ;

Sousa, JB ;

Tavares, PB ;

Vieira, JM ;

Alves, E ;

da Silva, MF ;

Soares, JC .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :5570-5572

[2] Anisotropic magnetoresistance and anomalous Hall effect in manganite thin films [J].

Bibes, M ;

Laukhin, V ;

Valencia, S ;

Martínez, B ;

Fontcuberta, J ;

Gorbenko, OY ;

Kaul, AR ;

Martínez, JL .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (17) :2733-2740

[3]

CAMPBELL A, 1970, J PHYS C SOLID STATE, V3, pS95

[4]

Campbell I. A., 1982, Ferromagnetic materials. A handbook on the properties of magnetically ordered substances. Vol.3, P747, DOI 10.1016/S1567-2719(82)03012-1

[5] NEW GALVANOMAGNETIC EFFECT [J].