Anisotropic magnetoresistance and anomalous Hall effect in manganite thin films

被引:42
作者
Bibes, M
Laukhin, V
Valencia, S
Martínez, B
Fontcuberta, J
Gorbenko, OY
Kaul, AR
Martínez, JL
机构
[1] CSIC, Inst Ciencias Mat Barcelona, Bellaterra 08193, Spain
[2] Univ Paris 11, Inst Electron Fondamentale, F-91405 Orsay, France
[3] Inst Catalana Rec & Estudis Avancats, Barcelona 08010, Spain
[4] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia
[5] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
关键词
D O I
10.1088/0953-8984/17/17/022
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on anisotropic magnetoresistance (AMR) and Hall effect measurements along the [1(1) over bar 0] and [001] directions in a (110)-oriented La2/3Ca1/3MnO3 thin film. While the electrical resistivity and the ordinary Hall coefficient are smaller for I along [001], evidencing some anisotropy of the Fermi surface, both the AMR and the anomalous Hall coefficient are larger when the current is applied along [1(1) over bar 0]. Since these two phenomena originate from spin-orbit coupling effects, we state that our results support an anisotropy of the spin-orbit interaction in manganites. The possible origin of this anisotropy is discussed.
引用
收藏
页码:2733 / 2740
页数:8
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