Local environment of Boron impurities in porous silicon and their interaction with NO2 molecules -: art. no. 205308

被引:49
作者
Boarino, L
Geobaldo, F
Borini, S
Rossi, AM
Rivolo, P
Rocchia, M
Garrone, E
Amato, G
机构
[1] Ist Elettrotecnico Nazl Galileo Ferraris, Thin Film Lab, I-10135 Turin, Italy
[2] Politecn Torino, Dept Chem & Mat Sci, I-10129 Turin, Italy
[3] Politecn Torino, Torino Politecn Unit, INFM, I-10129 Turin, Italy
关键词
D O I
10.1103/PhysRevB.64.205308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The aim of this paper is to gain insight into the observed recovery of electrical activity of B impurities occurring in Porous Silicon (PS) layers exposed to NO2 molecules, while addressing the problem of the origin of B passivation in PS. Two possible mechanisms are considered, i.e., that the extra electron needed for the fourfold coordination of B atoms be provided either by H atoms (through the formation of Si-H-B complexes) or Si dangling bonds at the surface. Experimental evidence shows unambiguously that a negligible amount of B atoms binds with H, even in posthydrogenated PS, the main passivation source being the Si surface dangling bonds. This explains both the mechanism of formation of PS under electrochemical etching and the efficiency of the NO2 molecules in restoring conduction.
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