Growth mechanisms and crystallographic structure of InP nanowires on lattice-mismatched substrates

被引：60

作者：

Moewe, Michael ^{[1
]}

Chuang, Linus C. ^{[1
]}

Dubrovskii, Vladimir G. ^{[2
,3
]}

Chang-Hasnain, Connie ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Russian Acad Sci Res & Educ, St Petersburg Phys Technol Ctr, St Petersburg 195220, Russia

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Organic chemicals - Metallorganic chemical vapor deposition - Organometallics - Indium phosphide - Zinc sulfide - Gallium arsenide - III-V semiconductors - Stacking faults - Semiconducting indium phosphide;

D O I：

10.1063/1.2968345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a growth model that predicts the growth phase and mechanism of InP nanowires (NWs) and the experimental verifications of the model. The NWs were grown on lattice-mismatched GaAs substrates using metal-organic chemical vapor deposition via Au nanodrop-assisted vapor-liquid-solid growth. Nanodrops with larger diameters are shown to grow longer NWs because growth is governed mainly by direct precursor impingement on the nanodrop surface. The theoretical and experimental results also show that growth phase is dependent on NW diameter. We show that InP NWs with a diameter less than a certain value exhibit coherent growth of a single crystalline wurtzite (WZ) phase, whereas larger diameter InP NWs often contain sequences of WZ and zincblende phases and stacking faults. These findings allow one to achieve coherent NW growth and WZ phases free from twinning if the NW diameter is below certain material-dependent critical diameters. (C) 2008 American Institute of Physics.

引用

页数：4

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