Amorphization of silicon by femtosecond laser pulses

被引：81

作者：

Jia, J

Li, M

Thompson, CV

机构：

[1] Panason Boston Lab, Cambridge, MA 02142 USA

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1719280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed. (C) 2004 American Institute of Physics.

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页码：3205 / 3207

页数：3

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