Aluminium passivation for TMAH based anisotropic etching for MEMS applications

被引：11

作者：

Lian, K

Stark, B

Gundlach, AM

Walton, AJ

机构：

[1] Univ Edinburgh, Dept Elect & Elect Engn, Edinburgh EH9 3JL, Midlothian, Scotland

[2] SensoNor ASA, N-3192 Horten, Norway

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 15期

关键词：

D O I：

10.1049/el:19990744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The addition of water glass (64 gSiO(2)/l) and ammonium persulfate (5g/l) to TMAH (5wt%) for silicon anisotropic etching has been shown to passivate aluminium in the same manner as solid silicon or silicic acid. Ih of etching results in an Si (1, 0, 0) etch rate of 1.1 mu m/min, and a surface roughness of < 100nm, making it suitable for MEMS applications.

引用

页码：1266 / 1267

页数：2

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