Use of microhotplate arrays as microdeposition substrates for materials exploration

被引:40
作者
Taylor, CJ [1 ]
Semancik, S [1 ]
机构
[1] NIST, Chem Sci & Technol Lab, Gaithersburg, MD 20899 USA
关键词
D O I
10.1021/cm0108583
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An approach for high-throughput rapid screening of chemical vapor deposition (CVD) materials using micromachined silicon microheater arrays is described. To illustrate this approach, titanium dioxide was deposited by CVD, using titanium(IV) nitrate and titanium(IV) isopropoxide at temperatures between 130 and 815 degreesC. Deposition was confined to the microhotplate elements within 4- and 16-element arrays. Film microstructure was examined by scanning electron microscopy. In situ electrical measurements were made with integrated microcontacts during the deposition of TiO2 using titanium(IV) isopropoxide. A novel approach using temperature-programmed deposition with temperature ramp rates up to 800 degreesC/s was also employed for microstructure modification during deposition. Additionally, the steep temperature gradients present on the microhotplate supports have been demonstrated to provide an excellent platform for investigating temperature-dependent microstructures.
引用
收藏
页码:1671 / 1677
页数:7
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