High temperature Pt Schottky diode gas sensors on n-type GaN

被引：171

作者：

Luther, BP ^{[1
]}

Wolter, SD ^{[1
]}

Mohney, SE ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1999年 / 56卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

hydrogen; Schottky diode; GaN; sensor;

D O I：

10.1016/S0925-4005(99)00174-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The characteristics of Pt Schottky diodes an n-type GaN in hydrogen and propane are reported for the first time. This response from 200-400 degrees C has been characterized by current-voltage measurements, revealing that the diodes are able to detect hydrogen from 200-400 degrees C and propane from 300-400 degrees C. The high temperature stability of Pt diodes on GaN has been investigated by long term annealing at 400 degrees C in Ar or 20% O-2 in Ar. The diodes have been held at 400 degrees C for 500 h without degradation of their electrical characteristics or response to hydrogen-containing gases. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：164 / 168

页数：5

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